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Speed, is that due to Vgs threshold voltage decreasing as temp increases? On the other hand you have Rds(on) rising as temp increases, which would negate some of that effect I would imagine (lower gate drive current).

But not my field so no idea how that interplay works out.



Carrier injection speed is a function of temperature.

Think of FET as a solid state thermionic valve, it's not that far away from it, if you dig into physics.




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